Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-12-14
2009-02-17
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S239000, C438S253000, C438S398000, C257SE21019, C257SE21013, C257SE21649
Reexamination Certificate
active
07491601
ABSTRACT:
An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with portions of the electrode wall being free of the insulating spacer between the substrate and the insulating spacer, and portions of the electrode most distant from the substrate may be free of the insulating spacer. Related methods and structures are also discussed.
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Korean Office Action.
English Translation of Korean Office Action.
Ahn Tae-hyuk
Jeon Jeong-sic
Lee Kwang-wook
Seo Jung-woo
Yeo In-joon
Ahmadi Mohsen
Lindsay, Jr. Walter L
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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