Methods of forming electronic devices including dielectric...

Details Methods of forming electronic devices including dielectric... Methods of forming electronic devices including dielectric...

2006-12-05

2006-12-05

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000

Reexamination Certificate

active

07144771

ABSTRACT:
Methods of forming an electronic device include providing a fist electrode, providing a dielectric oxide layer on the first electrode, and providing a second electrode on the dielectric oxide layer so that the dielectric oxide layer is between the first and second electrodes. More particularly, a first portion of the dielectric oxide layer adjacent the first electrode can have a first density of titanium, and a second portion of the dielectric oxide layer opposite the first electrode can have a second density of titanium different than the first density. Related structures are also discussed.

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English Translation of Korean Notice of Office Action for Korean App. No. 10-2002-0063024, Jul. 28, 2004.
Korean Notice of Office Action for Korean App. No. 10-2002-0063024, Jul. 28, 2004.

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