Methods of forming double gate electrodes using tunnel and...

Details Methods of forming double gate electrodes using tunnel and... Methods of forming double gate electrodes using tunnel and...

2005-05-31

2005-05-31

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S281000, C438S283000, C438S284000

Reexamination Certificate

active

06900102

ABSTRACT:
A double gate electrode for a field effect transistor is fabricated by forming in a substrate, a trench and a tunnel that extends from a sidewall of the trench parallel to the substrate. An insulating coating is formed inside the tunnel. A bottom gate electrode is formed within the insulating coating inside the tunnel. An insulating layer is formed on the substrate and a top gate electrode is formed on the insulating layer opposite the bottom gate electrode.

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patent: 2001-102590 (2001-04-01), None

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