Methods of forming complementary metal oxide semiconductor...

Details Methods of forming complementary metal oxide semiconductor... Methods of forming complementary metal oxide semiconductor...

2008-06-10

2008-06-10

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C257SE21442

Reexamination Certificate

active

07384850

ABSTRACT:
An integrated circuit device containing complementary metal oxide semiconductor transistors includes a semiconductor substrate and an NMOS transistor having a first fin-shaped active region that extends in the semiconductor substrate. The first fin-shaped active region has a first channel region therein with a first height. A PMOS transistor is also provided. The PMOS transistor has a second fin-shaped active region that extends in the semiconductor substrate. This second fin-shaped active region has a second channel region therein with a second height unequal to the first height.

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Korean Office Action for Korean patent application No. 10-2004-0019754; issued Aug. 31, 2005.

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