Methods of forming capacitors with high dielectric layers...

Details Methods of forming capacitors with high dielectric layers... Methods of forming capacitors with high dielectric layers...

2007-02-20

2007-02-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S250000, C257SE21011

Reexamination Certificate

active

11002571

ABSTRACT:
Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3(BTS) or Ba(Ti1-xZrx)O3(BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.

REFERENCES:
patent: 6143597 (2000-11-01), Matsuda et al.
patent: 6323057 (2001-11-01), Sone
patent: 2001/0014482 (2001-08-01), Agarwal et al.
patent: 2000114484 (2000-04-01), None
patent: 000008014 (2000-02-01), None
patent: 000042388 (2000-07-01), None
patent: 10-2002-0012878 (2002-02-01), None
patent: 10-2003-0039893 (2003-05-01), None
Notice to Submit a Response for Korean patent application No. 10-2003-0087976 mailed on Sep. 30, 2005.

Affiliated with

Also associated with

Rating

Methods of forming capacitors with high dielectric layers... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming capacitors with high dielectric layers..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming capacitors with high dielectric layers... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3870677