Methods of forming capacitors including electrodes with hemisphe

Details Methods of forming capacitors including electrodes with hemisphe Methods of forming capacitors including electrodes with hemisphe

1998-03-26

2000-07-11

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438253, 438255, 438398, H01L 218234

Patent

active

060872268

ABSTRACT:
A method of forming an integrated circuit device includes forming a conductive layer on an integrated circuit substrate, and forming a buffer layer on the conductive layer opposite the integrated circuit substrate. The buffer layer and the conductive layer are patterned to provide a mesa structure including the patterned buffer and conductive layers. A conductive spacer is formed along a sidewall of the mesa structure, and a hemispherical grained silicon layer is formed on the conductive spacer opposite the sidewall of the mesa structure. The patterned buffer layer is then removed after the step of forming the hemispherical grained silicon layer. Related structures are also discussed.

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