Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-11
2008-08-19
Tran, Long K (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S255000, C257SE29309, C257SE27086, C257SE27088, C257SE21679
Reexamination Certificate
active
07413950
ABSTRACT:
A capacitor is provided including a storage node contact pad and a storage electrode. The storage electrode includes at least two cylindrical conductive patterns. The at least two cylindrical conductive patterns are electrically coupled to a portion of a surface of the storage node contact pad. Related methods are also provided.
REFERENCES:
patent: 5923973 (1999-07-01), Chen et al.
patent: 6316799 (2001-11-01), Kunikiyo
patent: 6707096 (2004-03-01), Schoenfeld et al.
patent: 2004/0166627 (2004-08-01), Lim et al.
patent: 2004/0227175 (2004-11-01), Iijima et al.
patent: 94006587 (1994-07-01), None
patent: 00244281 (1999-11-01), None
patent: 000005623 (2000-01-01), None
patent: 1020010003464 (2001-01-01), None
patent: 10200158940 (2001-07-01), None
patent: 1020030047578 (2003-06-01), None
patent: 1020030094480 (2003-12-01), None
Korean Intellectual Office, “Notice to File a Response” corresponding to Korean Patent Application No. 10-2004-0001946, mailed Nov. 24, 2005.
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
Tran Long K
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