Methods of forming capacitors

Details Methods of forming capacitors Methods of forming capacitors

2006-10-17

2006-10-17

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S381000, C438S393000

Reexamination Certificate

active

07122422

ABSTRACT:
This invention includes methods of forming capacitors. In one implementation, a first capacitor electrode material is formed over a substrate. The first capacitor electrode material is exposed to a nitrogen comprising atmosphere effective to form a dielectric silicon and nitrogen comprising material on the first capacitor electrode material. The dielectric silicon and nitrogen comprising material is exposed to an aqueous fluid comprising a base and an oxidizer. The aqueous fluid has a pH greater than 7.0. After the exposing to the aqueous fluid, an aluminum oxide comprising capacitor dielectric material is deposited over the first capacitor electrode material. A second capacitor electrode material is formed over the aluminum oxide comprising capacitor dielectric material. Other aspects and implementations are contemplated.

REFERENCES:
patent: 6458416 (2002-10-01), Derderian et al.
patent: 6627260 (2003-09-01), Derderian et al.
patent: 6780766 (2004-08-01), Basceri et al.
patent: 6900106 (2005-05-01), Basceri et al.
patent: 6967154 (2005-11-01), Meng et al.
patent: 2003/0096473 (2003-05-01), Shih et al.
patent: 2003/0168689 (2003-09-01), Basceri et al.
patent: 2003/0213987 (2003-11-01), Basceri et al.
patent: 2003/0222300 (2003-12-01), Basceri et al.
patent: 2004/0180555 (2004-09-01), Basceri et al.
Material Safety Data Sheet:BakerClean® JTB-111 FEOL Cleaner,Mallinckrodt Baker, Inc., MSDS No. B0034, 5 pages (Jun. 29, 2001).

Affiliated with

Also associated with

Rating

Methods of forming capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3718579