Methods of forming capacitor structures

Details Methods of forming capacitor structures Methods of forming capacitor structures

2007-03-20

2007-03-20

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S253000, C438S396000

Reexamination Certificate

active

09755673

ABSTRACT:
The invention includes a method of forming a capacitor structure. A first electrical node is formed, and a layer of metallic aluminum is formed over the first electrical node. Subsequently, an entirety of the metallic aluminum within the layer is transformed into one or more of AlN, AlON, and AlO, with the transformed layer being a dielectric material over the first electrical node. A second electrical node is then formed over the dielectric material. The first electrical node, second electrical node and dielectric material together define at least a portion of the capacitor structure. The invention also pertains to a capacitor structure which includes a first electrical node, a second electrical node, and a dielectric material between the first and second electrical nodes. The dielectric material consists essentially of aluminum, oxygen and nitrogen.

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