Methods of forming capacitor electrodes containing HSG semicondu

Details Methods of forming capacitor electrodes containing HSG semicondu Methods of forming capacitor electrodes containing HSG semicondu

1997-01-08

1999-08-24

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438665, H01L 218242

Patent

active

059435704

ABSTRACT:
A capacitor for a semiconductor memory device and a method for manufacturing the same are provided. A lower electrode of a capacitor according to the present invention has a structure in which a first conductive layer and a second conductive layer are sequentially deposited and an HSG is selectively formed on the surface thereof. The first conductive layer is composed of an amorphous or a polycrystalline silicon film having a low concentration of impurities. The second conductive layer is composed of an amorphous silicon film having a high concentration of impurities. According to the present invention, it is possible to obtain a desirable Cmin/Cmax ratio in the lower electrode of the capacitor having an HSG silicon layer and to prevent diffusion of impurities from the lower electrode of the capacitor.

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