Methods of forming capacitor constructions

Details Methods of forming capacitor constructions Methods of forming capacitor constructions

2006-04-25

2006-04-25

Kennedy, Jennifer M. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000

Reexamination Certificate

active

07033884

ABSTRACT:
The invention includes capacitor constructions comprising a layer of aluminum oxide between a high-k dielectric material and a layer comprising titanium and nitrogen. The layer comprising titanium and nitrogen can be, for example, titanium nitride and/or boron-doped titanium nitride. The capacitor constructions can be incorporated into DRAM cells, which in turn can be incorporated into electronic systems. The invention also includes methods of forming capacitor constructions.

REFERENCES:
patent: 5418180 (1995-05-01), Brown
patent: 5874770 (1999-02-01), Saia et al.
patent: 5893963 (1999-04-01), Bagshaw
patent: 6111319 (2000-08-01), Liou et al.
patent: 6150226 (2000-11-01), Reinberg
patent: 6207487 (2001-03-01), Kim et al.
patent: 6222722 (2001-04-01), Fukuzumi et al.
patent: 6255187 (2001-07-01), Horii
patent: 6314023 (2001-11-01), Waldo
patent: 6320244 (2001-11-01), Alers et al.
patent: 6323096 (2001-11-01), Saia et al.
patent: 6335049 (2002-01-01), Basceri
patent: 6337237 (2002-01-01), Basceri et al.
patent: 6346454 (2002-02-01), Sung et al.
patent: 6350685 (2002-02-01), Asahina et al.
patent: 6387751 (2002-05-01), Tominaga
patent: 6446317 (2002-09-01), Figueroa et al.
patent: 6451646 (2002-09-01), Lu et al.
patent: 6452776 (2002-09-01), Chakravorty
patent: 6476432 (2002-11-01), Basceri et al.
patent: 6482736 (2002-11-01), Basceri et al.
patent: 6486022 (2002-11-01), Lee
patent: 6492241 (2002-12-01), Rhodes et al.
patent: 6511896 (2003-01-01), Basceri et al.
patent: 6534357 (2003-03-01), Basceri et al.
patent: 6558517 (2003-05-01), Basceri
patent: 6660580 (2003-12-01), Lee
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6780704 (2004-08-01), Raaijmakers et al.
patent: 6838122 (2005-01-01), Basceri et al.
patent: 6881642 (2005-04-01), Basceri et al.
patent: 6900106 (2005-05-01), Basceri et al.
patent: 2002/0115252 (2002-08-01), Haukka et al.
patent: 2003/0003621 (2003-01-01), Rhodes et al.
patent: 2003/0017265 (2003-01-01), Basceri et al.
patent: 2003/0017266 (2003-01-01), Basceri et al.
patent: 2003/0025142 (2003-02-01), Rhodes et al.
patent: 2003/0045006 (2003-03-01), Basceri
patent: 2003/0052358 (2003-03-01), Weimer
patent: 2003/0096473 (2003-05-01), Shih et al.
patent: 2003/0129799 (2003-07-01), Nam et al.
patent: 2003/0168689 (2003-09-01), Basceri et al.
patent: 2003/0168750 (2003-09-01), Basceri et al.
patent: 2003/0199139 (2003-10-01), Lee
patent: 2004/0113235 (2004-06-01), Coolbaugh et al.

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