Methods of forming an integrated circuit capacitor in which...

Details Methods of forming an integrated circuit capacitor in which... Methods of forming an integrated circuit capacitor in which...

2005-07-19

2005-07-19

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000

Reexamination Certificate

active

06919243

ABSTRACT:
An integrated circuit capacitor is manufactured by forming a lower electrode on a substrate and forming a metal preprocessed layer on the lower electrode using chemical vapor deposition in which a metal precursor is used as a source gas and the metal precursor comprises oxygen. A dielectric layer is then formed on the metal preprocessed layer and an upper electrode is formed on the dielectric layer. The metal preprocessed layer may reduce oxidation of the lower electrode due to oxygen supplied during formation of the dielectric layer.

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Handbook of Chemical Vapor Deposition (CVD), Noyes Publications, Copyright 1992, Author : Hugh O. Pierson, pp. 234, Section 5.6.
Notice to Submit Response, KR Application No. 10-2001-0002960, Oct. 31, 2002.

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