Methods of forming an asymmetric field effect transistor

Details Methods of forming an asymmetric field effect transistor Methods of forming an asymmetric field effect transistor

2006-10-25

2008-10-28

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S306000, C257SE21135, C257S335000

Reexamination Certificate

active

07442613

ABSTRACT:
A field effect transistor includes a channel region under a gate stack formed on a semiconductor structure. The field effect transistor also includes a drain region formed with a first dopant doping a first side of the channel region, and includes a source region formed with the first dopant doping a second side of the channel region. The drain and source regions are doped asymmetrically such that a first charge carrier profile between the channel and drain regions has a steeper slope than a second charge carrier profile between the channel and source regions.

REFERENCES:
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patent: 6570233 (2003-05-01), Matsumura
patent: 6858529 (2005-02-01), Chung et al.
patent: 2004/0152297 (2004-08-01), Ooto et al.
patent: 2005/0064689 (2005-03-01), Mouli

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