Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-04-06
2008-09-02
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
Reexamination Certificate
active
07419918
ABSTRACT:
In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration process. A lower nitride film is formed between the substrate and the oxide film by nitrifying a lower portion of the oxide film through a thermal nitration process. A damage to the thin-film structure generated in the plasma nitration process may be at least partially cured in the thermal nitration process, and/or may be cured in a post-thermal treatment process.
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Notice to Submit Response in Korean Application No. 10-2005-0028800; Date of mailing May 25, 2006.
Translation of Notice to Submit Response in Korean Application No. 10-2005-0028800; Date of mailing May 25, 2006.
Kim Chul-Sung
Kim Ji-Hyun
Koo Bon-Young
Noh Young-Jin
Shin Yu-Gyun
Lee Calvin
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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