Methods of forming a multilayer stack alloy for work...

Details Methods of forming a multilayer stack alloy for work... Methods of forming a multilayer stack alloy for work...

2005-02-01

2005-02-01

Chaudhari, Chandra (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S592000

Reexamination Certificate

active

06849509

ABSTRACT:
A method of forming a gate electrode is described, comprising forming a dielectric layer on a substrate, forming a first metal layer having a first work function on the dielectric layer, forming a second metal layer having a second work function on the first metal layer, such that a gate electrode is formed on the dielectric layer which has a work function that is determined from the work function of the alloy of the two types of metal. The work function of a microelectronic transistor can be varied or “tuned” depending on the precise definition and control of the metal types, layer sequence, individual layer thickness and total number of layers.

REFERENCES:
patent: 5757032 (1998-05-01), Nishibayashi et al.
patent: 6130123 (2000-10-01), Liang et al.
patent: 20030180994 (2003-09-01), Polishchuk et al.

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