Methods of forming a gate structure of a non-volatile memory...

Details Methods of forming a gate structure of a non-volatile memory... Methods of forming a gate structure of a non-volatile memory...

2007-01-09

2007-01-09

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S265000, C257SE21176, C257SE21179

Reexamination Certificate

active

11145454

ABSTRACT:
Methods of forming a gate structure of a non-volatile memory device include forming a gate pattern having a control gate on a semiconductor substrate. An oxidation-preventing layer is formed on the control gate in a process chamber while maintaining a substantially oxygen free atmosphere in the process chamber. An oxide spacer is formed on a sidewall of the gate pattern with the oxidation-preventing layer thereon in the process chamber. Forming an oxidation-preventing layer may include exposing the gate pattern to a first gas in the process chamber and forming an oxide spacer may include exposing the gate pattern to a second gas including oxygen in the process chamber.

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Notice to Submit a Response for Korean Patent Application No. 10-2004-004389 mailed on Nov. 30, 2005.

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