Methods of forming a conductive layer structure and methods...

Details Methods of forming a conductive layer structure and methods... Methods of forming a conductive layer structure and methods...

2010-12-15

2011-11-29

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S330000, C257S332000

Reexamination Certificate

active

08067285

ABSTRACT:
In a method of forming a conductive layer structure and a method of manufacturing a recess channel transistor, a first insulating layer and a first conductive layer are sequentially formed on a substrate having a first region a second region and the substrate is exposed in a recess-forming area in the first region. A recess is formed in the recess-forming-area by etching the exposed region of the substrate. A second insulating layer is conformally formed on a sidewall and a bottom of the recess. A second conductive layer pattern is formed on the second insulating layer to fill up a portion of the recess. A spacer is formed on the second conductive layer pattern and on the second insulating layer on the sidewall of the recess. A third conductive layer pattern is formed on the second conductive layer pattern and the spacer to fill up the recess.

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