Methods of forming a capacitor structure and methods of...

Details Methods of forming a capacitor structure and methods of... Methods of forming a capacitor structure and methods of...

2010-11-24

2011-10-18

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S398000, C257S309000, C257SE21013

Reexamination Certificate

active

08039344

ABSTRACT:
In a method of forming a capacitor, a seed stopper and a sacrificial layer is formed on an insulating interlayer having a plug therethrough. An opening is formed through the sacrificial layer and the seed stopper to expose the plug. A seed is formed on an innerwall of the opening. A lower electrode is formed covering the seed on the innerwall of the opening. The sacrificial layer and the seed are removed. A dielectric layer and an upper electrode are sequentially formed on the lower electrode.

REFERENCES:
patent: 5760434 (1998-06-01), Zahurak et al.
patent: 6222722 (2001-04-01), Fukuzumi et al.
patent: 2005/0153518 (2005-07-01), You et al.
patent: 1020040077041 (2004-09-01), None
patent: 1020060011559 (2006-02-01), None

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