Methods of filling trenches using high-density plasma...

Details Methods of filling trenches using high-density plasma... Methods of filling trenches using high-density plasma...

2006-06-06

2006-06-06

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S674000

Reexamination Certificate

active

07056827

ABSTRACT:
Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.

REFERENCES:
patent: 6395150 (2002-05-01), Van Cleemput et al.
patent: 2002/0137276 (2002-09-01), Park
patent: 2004/0266133 (2004-12-01), Kim
patent: 2002-0044001 (2002-06-01), None
patent: 2003-0002889 (2003-01-01), None
Korean Intellectual Property Office, “Notice to File a Response/Amendment to the Examination Report,” corresponding to Korean Patent application 2003-0056637, dated Jun. 27, 2005.

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