Methods of fabrication of channel-stressed semiconductor...

Details Methods of fabrication of channel-stressed semiconductor... Methods of fabrication of channel-stressed semiconductor...

2011-07-19

2011-07-19

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S938000, C257SE21090, C257SE21634

Reexamination Certificate

active

07981750

ABSTRACT:
In one aspect, a method of fabricating a semiconductor device is provided. The method includes forming at least one capping layer over epitaxial source/drain regions of a PMOS device, forming a stress memorization (SM) layer over the PMOS device including the at least one capping layer and over an adjacent NMOS device, and treating the SM layer formed over the NMOS and PMOS devices to induce tensile stress in a channel region of the NMOS device.

REFERENCES:
patent: 6870179 (2005-03-01), Shaheed et al.
patent: 6906393 (2005-06-01), Sayama et al.
patent: 7608499 (2009-10-01), Romero et al.
patent: 7820500 (2010-10-01), Ning
patent: 2004/0262683 (2004-12-01), Bohr et al.
patent: 2005/0136583 (2005-06-01), Chen et al.
patent: 2005/0164431 (2005-07-01), Bu et al.
patent: 2005/0218455 (2005-10-01), Maeda et al.
patent: 2006/0024898 (2006-02-01), Chidambaram et al.
patent: 2006/0138398 (2006-06-01), Shimamune et al.
patent: 2007/0200179 (2007-08-01), Chen
patent: 2008/0242020 (2008-10-01), Chen et al.

Affiliated with

Also associated with

Rating

Methods of fabrication of channel-stressed semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabrication of channel-stressed semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabrication of channel-stressed semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2682984