Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-17
2006-10-17
Loke, Steven (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C438S271000, C438S589000, C438S149000, C438S479000, C438S517000, C438S221000, C438S296000, C438S353000
Reexamination Certificate
active
07122431
ABSTRACT:
Methods of forming a unit cell of a metal oxide semiconductor (MOS) transistor are provided. An integrated circuit substrate is formed. A MOS transistor is formed on the integrated circuit substrate. The MOS transistor has a source region, a drain region and a gate. The gate is between the source region and the drain region. The first and second spaced apart buffer regions are formed beneath the source region and the drain region and between respective ones of the source region and integrated circuit substrate and the drain region and the integrated circuit substrate.
REFERENCES:
patent: 5418393 (1995-05-01), Hayden
patent: 5891763 (1999-04-01), Wanlass
patent: 11-261068 (1999-09-01), None
“Notice to File Response to a Rejection,” from the Korean Intellectual Property Office, corresponding to Korean Patent Application No. 2002-02995, dated Sep. 13, 2004.
Cho Hye-Jin
Choe Jeong-Dong
Kim Sung-Min
Lee Shin-Ae
Lee Sung-Young
Loke Steven
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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