Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-22
2008-04-22
Cao, Phat X (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S254000, C257SE21657
Reexamination Certificate
active
07361550
ABSTRACT:
A semiconductor memory device includes a semiconductor substrate having an active region therein, an insulating layer on the substrate, and a lower electrode conductive pad extending through the insulating layer. The lower electrode conductive pad electrically contacts the active region at a lower surface of the lower electrode conductive pad. A lower electrode conductive plug on at least a portion of the lower electrode conductive pad electrically contacts the lower electrode conductive pad at an upper surface and at one sidewall thereof. The semiconductor device may further include a bitline conductor on the substrate adjacent the lower electrode conductive plug and an insulating spacer on a sidewall of the bitline conductor adjacent the lower electrode conductive plug. The insulating spacer may separate the lower electrode conductive plug from the bitline conductor by a distance sufficient to prevent electrical contact therebetween. Related methods are also discussed.
REFERENCES:
patent: 5140389 (1992-08-01), Kimura et al.
patent: 5940714 (1999-08-01), Lee et al.
patent: 6214715 (2001-04-01), Huang et al.
patent: 6613664 (2003-09-01), Barth et al.
patent: 6621110 (2003-09-01), Matsuoka et al.
patent: 6861690 (2005-03-01), Park
patent: 2001/0001211 (2001-05-01), Tanaka et al.
patent: 2001/0046151 (2001-11-01), Takeda et al.
patent: 2002/0096701 (2002-07-01), Torii et al.
patent: 2003/0054634 (2003-03-01), Lee et al.
patent: 2003/0107073 (2003-06-01), Iijima et al.
patent: 2003/0151083 (2003-08-01), Matsui et al.
patent: 2005/0218440 (2005-10-01), Park
patent: 2000-353793 (2000-12-01), None
patent: 2001-0017558 (2001-03-01), None
patent: 2001-0037878 (2001-05-01), None
patent: 2002-013809 (2002-02-01), None
Notice to Submit Response corresponding to Korean Patent Application No. 10-2004-0083972 mailed Feb. 24, 2006.
Cao Phat X
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
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