Methods of fabricating semiconductor devices including...

Details Methods of fabricating semiconductor devices including... Methods of fabricating semiconductor devices including...

2007-03-27

2007-03-27

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S585000, C438S672000, C438S700000, C438S740000, C438S778000, C438S970000, C438S384000, C257S288000, C257S350000, C257S358000, C257S360000, C257S379000, C257S380000, C257S635000, C257S637000

Reexamination Certificate

active

11011644

ABSTRACT:
Methods of fabricating semiconductor devices are provided. Transistors are provided on a semiconductor substrate. A first interlayer insulating layer is provided on the transistors. A second interlayer insulating layer is provided on the first interlayer insulating layer. The second interlayer insulating layer defines a trench such that at least a portion of an upper surface of the first interlayer insulating layer is exposed. A resistor pattern is provided in the trench such that the at least a portion of the resistor pattern contacts the exposed portion of the first interlayer insulating layer. Related methods are also provided.

REFERENCES:
patent: 4786612 (1988-11-01), Yau et al.
patent: 5834815 (1998-11-01), Cheng et al.
patent: 6023099 (2000-02-01), Komuro
patent: 6172389 (2001-01-01), Sakoh
patent: 6548851 (2003-04-01), Bae et al.
patent: 2004/0175924 (2004-09-01), Choi et al.
patent: 2000-077633 (2000-03-01), None
patent: 1020000015684 (2000-03-01), None
patent: 1020010086996 (2001-09-01), None
patent: 10-2004-0016679 (2004-02-01), None
Ichige et al., “A Novel Self-Aligned Shallow Trench Isolation Cell for 90nm 4Gbit NAND Flash EEPROMs,”2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 89-90.
Korean Intellectual Office, “Notice to File a Response/Amendment to the Examination Report” corresponding to Korean Patent Application No. 10-2004-0037463, mailed Dec. 21, 2005.

Affiliated with

Also associated with

Rating

Methods of fabricating semiconductor devices including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating semiconductor devices including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating semiconductor devices including... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3735845