Methods of fabricating semiconductor devices including...

Details Methods of fabricating semiconductor devices including... Methods of fabricating semiconductor devices including...

2011-01-11

2011-01-11

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S368000, C438S294000, C257S394000, C257SE21431

Reexamination Certificate

active

07867865

ABSTRACT:
Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.

REFERENCES:
patent: 7176109 (2007-02-01), Ping et al.
patent: 2007/0059889 (2007-03-01), Yoo et al.
patent: 2007-088138 (2007-04-01), None
patent: 1020030094742 (2003-12-01), None
patent: 1020060014672 (2006-02-01), None
Notice to Submit Response, JP Application No. 10-2007-0066217, Nov. 29, 2008.

Affiliated with

Also associated with

Rating

Methods of fabricating semiconductor devices including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating semiconductor devices including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating semiconductor devices including... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2618928