Methods of fabricating semiconductor devices having multiple...

Details Methods of fabricating semiconductor devices having multiple... Methods of fabricating semiconductor devices having multiple...

2011-05-31

2011-05-31

Ghyka, Alexander G (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21410, C257SE29028, C257SE29262

Reexamination Certificate

active

07952140

ABSTRACT:
In methods of fabricating a semiconductor device having multiple channel transistors and semiconductor devices fabricated thereby, the semiconductor device includes an isolation region disposed within a semiconductor substrate and defining a first region. A plurality of semiconductor pillars self-aligned with the first region and spaced apart from each other are disposed within the first region, and each of the semiconductor pillars has at least one recessed region therein. At least one gate structure may be disposed across the recessed regions, which crosses the semiconductor pillars and extends onto the isolation region.

REFERENCES:
patent: 6872647 (2005-03-01), Yu et al.
patent: 6970372 (2005-11-01), Furukawa et al.
patent: 7071048 (2006-07-01), Son et al.
patent: 7265059 (2007-09-01), Rao et al.
patent: 7355253 (2008-04-01), Cohen
patent: 7670909 (2010-03-01), Cho
patent: 2005/0056888 (2005-03-01), Youn et al.
patent: 2005/0077553 (2005-04-01), Kim et al.
patent: 2005/0121412 (2005-06-01), Beintner et al.
patent: 2005/0239254 (2005-10-01), Chi et al.
patent: 2006/0046407 (2006-03-01), Juengling
patent: 2006/0081895 (2006-04-01), Lee et al.
patent: 2006/0088967 (2006-04-01), Hsiao et al.
patent: 2007/0105334 (2007-05-01), Jang et al.
patent: 1020050035712 (2005-04-01), None
“Methods of Fabricating Semiconductor Devices Having Multiple Channels Transistors and Semiconductor Devices Fabricated Thereby” Specification, Drawings, and Prosecution History of U.S. Appl. No. 11/486,343, filed Jul. 13, 2006 by Se-Myeong Jang, et al., which is stored in the United States Patent and Trademark Office (USPTO) Image File Wrapper (IFW) system.

Affiliated with

Also associated with

Rating

Methods of fabricating semiconductor devices having multiple... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating semiconductor devices having multiple..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating semiconductor devices having multiple... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2620442