Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2007-02-02
2008-12-30
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C257SE21001
Reexamination Certificate
active
07470603
ABSTRACT:
Methods of fabricating a semiconductor device are provided. A semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A thin layer is formed on the semiconductor substrate. The thin layer is patterned to form a plurality of spaced apart field structures and to expose therebetween portions of the semiconductor substrate having the single crystalline structure. A non-crystalline layer is formed on the exposed portions of the semiconductor substrate having the single crystalline structure. The non-crystalline layer is planarized to expose upper surfaces of the field structures and define non-crystalline active structures from the non-crystalline layer between the field structures. A laser beam is generated that heats the non-crystalline active structures to change them into single crystalline active structures having substantially the same single crystalline structure as the defined region of the semiconductor substrate.
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Notice of Reasons for Refusal, KR 10-2006-0065281, Jun. 27, 2007.
Cha Yong-Won
Kang Pil-Kyu
Kang Sung-Kwan
Lee Jong-Wook
Son Yong-Hoon
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Smith Matthew
Swanson Walter H
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