Methods of fabricating semiconductor devices having...

Details Methods of fabricating semiconductor devices having... Methods of fabricating semiconductor devices having...

2008-03-25

2008-03-25

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S506000, C438S706000, C438S740000, C257SE21170, C257SE21245, C257SE21229, C257SE21304, C257SE21632

Reexamination Certificate

active

07348231

ABSTRACT:
Methods of fabricating semiconductor devices are provided. An NMOS transistor and a PMOS transistor are provided on a substrate. The NMOS transistor is positioned on an NMOS region of the substrate and the PMOS transistor is positioned on a PMOS region of the substrate. A first insulating layer is provided on the NMOS transistor. The first insulating layer has a first compressive stress. A second insulating layer is provided on the PMOS transistor. The second insulating layer has a second compressive stress and a stress relief ratio higher than a stress relief ratio of the first insulating layer. A thermal treatment process is performed on the first insulating layer and the second insulating layer such that the second compressive stress of the second insulating layer is lower than the first compressive stress of the first insulating layer. Related devices are also provided.

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Office Action issued by the Korean Intellectual Property Office on Aug. 29, 2006, corresponding to Korean Patent Application No. 10-2005-0000192.
English Translation of the Office Action issued by the Korean Intellectual Property Office on Aug. 29, 2006, corresponding to Korean Patent Application No. 10-2005-0000192.

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