Methods of fabricating semiconductor device including fin-fet

Details Methods of fabricating semiconductor device including fin-fet Methods of fabricating semiconductor device including fin-fet

2007-07-03

2010-06-29

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S164000, C438S212000, C438S589000, C257SE21410

Reexamination Certificate

active

07745290

ABSTRACT:
A method of fabricating a semiconductor device including a fin field effect transistor (Fin-FET) includes forming sacrificial bars on a semiconductor substrate, patterning the sacrificial bars to form sacrificial islands on the semiconductor substrate, forming a device isolation layer to fill a space between the sacrificial islands, selectively removing the sacrificial islands to expose the semiconductor substrate below the sacrificial islands, and anisotropically etching the exposed semiconductor substrate using the device isolation layer as an etch mask to form a recessed channel region. The recessed channel region allows the channel width and channel length of a transistor to be increased, thereby reducing the occurrence of short channel effects and narrow channel effects in highly integrated semiconductor devices.

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English language abstract of Korean Publication No. 10-2005-0015975, Feb. 21, 2005.
English language abstract of Korean Publication No. 10-2006-0000275, Jan. 6, 2006.

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