Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-05
2006-09-05
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S596000, C257SE21205
Reexamination Certificate
active
07101766
ABSTRACT:
There are provided methods of fabricating a semiconductor device having a T-shaped gate and an L-shaped spacer. In the method, an insulating layer and a sacrificial layer are formed in sequence on a semiconductor substrate having a vertical gate pattern. By etching the sacrificial layer, a sacrificial spacer is formed. By etching the insulating layer until an upper surface of at least the vertical gate pattern is exposed, there is formed an L-shaped spacer, which includes a vertical portion located between sidewalls of the vertical gate pattern and the sacrificial spacer, and a horizontal portion extended from the vertical portion and located between the semiconductor substrate and the sacrificial spacer. By selectively etching a part of the vertical portion of the L-shaped spacer, an empty space is formed between upper sidewalls of the vertical gate pattern and the sacrificial spacer. A horizontal gate pattern, which is formed of a conductive layer to fill at least the empty space, is formed, and thus, there is formed a T-shaped gate being composed of the vertical gate pattern and the horizontal gate pattern.
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Chaudhari Chandra
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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