Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-04-05
2011-11-15
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S589000, C257SE21190, C257SE21410
Reexamination Certificate
active
08058128
ABSTRACT:
A method of fabricating a semiconductor device includes forming a mask pattern on an active region of a substrate defined by an isolation region. The mask pattern includes an opening therein exposing a portion of the active region. The exposed portion of the active region is etched to define a preliminary gate trench therein including opposing sidewalls and a surface therebetween, where portions of the mask pattern extend to edges of the active region outside the preliminary gate trench. An annealing process is performed on the substrate to form a gate trench from the preliminary gate trench, and gate electrode is formed in the gate trench. The preliminary gate trench and the gate trench have a substantially similar width defined between the edges of the active region including the portions of the mask pattern thereon.
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Choi Bo-Wo
Hwang In-Seak
Lee Keum-Joo
Ghyka Alexander
Isaac Stanetta
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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