Methods of fabricating phase change memory cells having a...

Details Methods of fabricating phase change memory cells having a... Methods of fabricating phase change memory cells having a...

2006-03-27

2008-10-28

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S102000, C438S103000, C438S202000, C438S241000, C438S244000, C438S303000, C438S305000, C438S328000, C257SE21537

Reexamination Certificate

active

07442602

ABSTRACT:
Integrated circuit devices are provided having a vertical diode therein. The devices include an integrated circuit substrate and an insulating layer on the integrated circuit substrate. A contact hole penetrates the insulating layer. A vertical diode is in a lower region of the contact hole and a bottom electrode in the contact hole has a bottom surface on a top surface of the vertical diode. The bottom electrode is self-aligned with the vertical diode. A top surface area of the bottom electrode is less than a horizontal section area of the contact hole. Methods of forming the integrated circuit devices and phase change memory cells are also provided.

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Office Action for corresponding German Office Action dated Apr. 30, 2008.
Office Action for corresponding German Application No. 10 2006 028 971.4-33; dated Jun. 21, 2007.
Office Action for the corresponding Korean Patent Application No. 10-2005-0053217; date of mailing Jul. 31, 2006.

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