Methods of fabricating nonvolatile semiconductor memory...

Details Methods of fabricating nonvolatile semiconductor memory... Methods of fabricating nonvolatile semiconductor memory...

2011-03-15

2011-03-15

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000

Reexamination Certificate

active

07906397

ABSTRACT:
A nonvolatile semiconductor memory device includes a plurality of pillars protruding upward from a semiconductor substrate and having respective top surfaces and opposing sidewalls, a bit line on the top surfaces of the pillars and connecting a row of the pillars along a first direction, a pair of word lines on the opposing sidewalls of one of the plurality of pillars and crossing beneath the bit line, and a pair of memory layers interposed between respective ones of the pair of word lines and the one of the plurality of pillars. Methods of fabricating a nonvolatile semiconductor memory device include selectively etching a semiconductor substrate to form pluralities of stripes having opposing sidewalls and being arranged along a direction, forming memory layers and word lines along the sidewalls of the stripes selectively etching the stripes to form a plurality of pillars, and forming a bit line connecting the pillars and crossing above the word lines.

REFERENCES:
patent: 5936274 (1999-08-01), Forbes et al.
patent: 6150687 (2000-11-01), Noble et al.
patent: 6677204 (2004-01-01), Cleeves et al.
patent: 6881994 (2005-04-01), Lee et al.
patent: 7442988 (2008-10-01), Oh et al.
patent: 7525145 (2009-04-01), Shukuri
patent: 2002/0034855 (2002-03-01), Horiguchi et al.
patent: 2004/0232471 (2004-11-01), Shukuri
patent: 2002-083945 (2002-03-01), None
patent: 2002-246571 (2002-08-01), None
patent: 2003-086712 (2003-03-01), None
patent: 2003-218242 (2003-07-01), None
Notice to File a Response/Amendment to the Examination Report for corresponding Korean Application No. 10-2005-0086443, Mailed Oct. 20, 2006.

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