Methods of fabricating nonvolatile memory devices

Details Methods of fabricating nonvolatile memory devices Methods of fabricating nonvolatile memory devices

2009-12-10

2011-11-08

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C257S324000, C257SE27060, C257SE21606

Reexamination Certificate

active

08053829

ABSTRACT:
Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to the active pillar, the charge storage layer being disposed between the active pillar and the gates. Before depositing a gate, a bulk substrate is etched using a dry etching to form a vertical active pillar which is in a single body with a semiconductor substrate.

REFERENCES:
patent: 7704832 (2010-04-01), Kai et al.
patent: 2007/0252201 (2007-11-01), Kito et al.
patent: 2010/0140666 (2010-06-01), Yoon

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