Methods of fabricating nonvolatile memory device

Details Methods of fabricating nonvolatile memory device Methods of fabricating nonvolatile memory device

2007-05-08

2007-05-08

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S423000, C438S238000, C438S381000, C257SE21008, C257S662000, C257S679000

Reexamination Certificate

active

11024746

ABSTRACT:
A method of fabricating nonvolatile memory devices. The method includes forming a tunnel oxide layer, a stacked oxide layer, a polysilicon layer for a control gate, a buffer oxide layer and a buffer nitride layer in order on the entire surface of a semiconductor substrate, and patterning the substrate vertically to form a control gate and a first device isolation region. The method also includes implanting ions into the first device isolation region to form common source and drain regions, filling the gap of the first device isolation region to form a first device isolation structure, and removing the buffer nitride layer and the buffer oxide layer. The method further includes depositing polysilicon for a word line on the substrate, and patterning the substrate vertically to form the word line and a second device isolation region, forming sidewall spacers on the sidewalls of the control gate and the word line, and forming silicide on the word line.

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