Methods of fabricating non-volatile memory devices including...

Details Methods of fabricating non-volatile memory devices including... Methods of fabricating non-volatile memory devices including...

2008-03-25

2008-03-25

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S401000, C257S341000, C257SE21379, C257SE21418, C257SE29257

Reexamination Certificate

active

11268034

ABSTRACT:
A semiconductor memory device includes a substrate having first and second source/drain regions therein and a channel region therebetween. The device also includes first and second charge storage layers on the channel region, a first insulating layer on the channel region between the first and second charge storage layers, and a gate electrode on the insulating layer opposite the channel region and between inner sidewalls of the first and second charge storage layers. The gate electrode extends away from the substrate beyond the first and second charge storage layers. The device further includes second and third insulating layers extending from adjacent the inner sidewalls of the first and second charge storage layers along portions of the gate electrode beyond the first and second charge storage layers. Related methods of fabrication are also discussed.

REFERENCES:
patent: 6657252 (2003-12-01), Fried et al.
patent: 6844589 (2005-01-01), Kim
patent: 7098502 (2006-08-01), Mathew et al.
patent: 2003/0178670 (2003-09-01), Fried et al.
patent: 2004/0207002 (2004-10-01), Ryu et al.

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