Methods of fabricating multi-layer nonvolatile memory devices

Details Methods of fabricating multi-layer nonvolatile memory devices Methods of fabricating multi-layer nonvolatile memory devices

2011-03-22

2011-03-22

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S152000, C257S067000, C257SE27026, C257SE27155, C257S315000

Reexamination Certificate

active

07910433

ABSTRACT:
A nonvolatile memory device includes a semiconductor substrate having a first well region of a first conductivity type, and at least one semiconductor layer formed on the semiconductor substrate. A first cell array is formed on the semiconductor substrate, and a second cell array formed on the semiconductor layer. The semiconductor layer includes a second well region of the first conductivity type having a doping concentration greater than a doping concentration of the first well region of the first conductivity type. As the doping concentration of the second well region is increased, a resistance difference may be reduced between the first and second well regions.

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Notice of Allowance for Korean Patent Application No. 10-2006-0103050; Sep. 27, 2007.
English translation of the Notice of Allowance for Korean Patent Application No. 10-2006-0103050; Sep. 27, 2007.

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