Methods of fabricating MIM capacitors

Details Methods of fabricating MIM capacitors Methods of fabricating MIM capacitors

2007-08-28

2007-08-28

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S396000, C257SE29345

Reexamination Certificate

active

11319692

ABSTRACT:
Methods of fabricating MIM capacitors are provided. One example method includes forming an insulating layer including a void on a semiconductor substrate, forming a first hole connected to the void by patterning the insulating layer, forming a lower electrode by forming a tungsten layer filling in the first hole such that the tungsten flows into the void, forming a dielectric layer, forming a second hole penetrating the dielectric layer and protruding toward the insulating layer, forming a connecting contact connected to the lower electrode by filling in the second hole, and forming an upper electrode on the dielectric layer.

REFERENCES:
patent: 2006/0017136 (2006-01-01), Won et al.

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