Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2007-08-14

2007-08-14

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S672000, C438S700000, C438S706000

Reexamination Certificate

active

11321118

ABSTRACT:
For a semiconductor device having copper wiring, an exemplary method according to an embodiment of the present invention may include forming a first insulation layer on a silicon substrate having a transistor thereon; forming a contact hole by etching the first insulation layer; forming a metal plug so as to fill the contact hole; forming a second insulation layer on the metal plug; forming a trench exposing an upper surface of the metal plug by partially removing the second insulation layer; sputter-etching an interior wall and bottom surface of the trench with a plasma; and forming a copper line layer so as to fill the sputter-etched trench. According to this method, electrical contact between a metal plug and a copper line layer may be maintained or improved prevented by reducing or removing by-products on the metal plug using the sputter-etching process.

REFERENCES:
patent: 2005/0006222 (2005-01-01), Ding et al.
patent: 2005/0101118 (2005-05-01), Kimura et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3874783