Methods of fabricating microelectronic electrode structures usin

Details Methods of fabricating microelectronic electrode structures usin Methods of fabricating microelectronic electrode structures usin

1997-05-22

1999-09-28

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438398, 438964, H01L 218242

Patent

active

059602813

ABSTRACT:
An electrode structure is fabricated on a microelectronic substrate by forming an amorphous silicon electrode on the microelectronic substrate and cleaning the surface of the amorphous silicon electrode to remove contaminants and surface oxides therefrom. A thin amorphous silicon layer is formed on the clean surface of the amorphous silicon electrode. Silicon crystal nuclei are then formed and grown on the thin amorphous silicon layer. The electrode structure may be used as a bottom electrode for an integrated circuit capacitor, such as the storage capacitor for an integrated circuit DRAM.

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