Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-01
2010-02-02
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21648, C438S396000
Reexamination Certificate
active
07655519
ABSTRACT:
A metal-insulator-metal (MIM) capacitor includes a lower electrode, a dielectric layer, and an upper electrode. The lower electrode includes a first conductive layer, a chemical barrier layer on the first conductive layer, and a second conductive layer on the chemical barrier layer. The chemical barrier layer is between the first and second conductive layers and is a different material than the first and second conductive layers. The dielectric layer is on the lower electrode. The upper electrode is on the dielectric layer opposite to the lower electrode. The first and second conductive layers can have the same thickness. The chemical barrier layer can be thinner than each of the first and second conductive layers. Related methods are discussed.
REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 6078492 (2000-06-01), Huang et al.
patent: 6486518 (2002-11-01), Okumoto et al.
patent: 6645811 (2003-11-01), Roh
patent: 6670256 (2003-12-01), Yang et al.
patent: 2001/0001501 (2001-05-01), Lee et al.
patent: 2001/0023110 (2001-09-01), Fukuzumi et al.
patent: 2003/0232483 (2003-12-01), Fujiishi
patent: 2004/0051131 (2004-03-01), Miyajima
patent: 2005/0003609 (2005-01-01), Fazan et al.
patent: 2005/0023640 (2005-02-01), Choi et al.
patent: 2001-053251 (2001-02-01), None
patent: 1020000065969 (2000-11-01), None
patent: 1020040000602 (2004-01-01), None
patent: 10-2006-0011443 (2006-02-01), None
Korean Intellectual Property Office “Notice to Submit Response” for Korean Appl. No. 10-2004-0099058, issued on Mar. 29, 2006.
English translation of Korean Intellectual Property Office “Notice to Submit Response” for Korean Appl. No. 10-2004-0099058, issued on Mar. 29, 2006.
Choi Jae-hyoung
Chung Eun-ae
Chung Jung-hee
Kim Young-sun
Yoo Cha-young
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
Sarkar Asok K
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