Methods of fabricating integrated circuit transistors by...

Details Methods of fabricating integrated circuit transistors by... Methods of fabricating integrated circuit transistors by...

2005-11-03

2009-06-02

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S780000, C438S793000, C438S794000, C438S149000, C257SE21041, C257SE21049, C257SE21005

Reexamination Certificate

active

07541234

ABSTRACT:
Integrated circuit transistors may be fabricated by simultaneously removing a photoresist layer on a first active area of an integrated circuit substrate and a carbon-containing layer on a second active area of the integrated circuit substrate, to expose a nitride stress-generating layer on the second active area. A single mask may be used to define the second active area for removal of the photoresist layer on the first active area and for implanting source/drain regions into the second active area.

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JSR Micro Materials Innovation, “Tarc Resists”, downloaded on Sep. 17, 2005 from http://www.jsrmicro.com/pro—photo—Tarc.html.

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