Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-08
2005-03-08
Cuneo, Kamand (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
06864132
ABSTRACT:
Integrated circuit gates are fabricated by forming an insulated gate on an integrated circuit substrate, wherein the insulated gate includes a gate oxide on the integrated circuit substrate, a polysilicon pattern including polysilicon sidewalls, on the gate oxide, and a metal pattern on the polysilicon pattern. The insulated gate is pretreated with hydrogen and nitrogen gasses. The polysilicon sidewalls are then oxidized. The pretreating in hydrogen and nitrogen gasses prior to oxidizing can reduce growth in thickness of the gate oxide during the oxidizing and/or can reduce formation of whiskers on the metal pattern, compared to absence of the pretreatment.
REFERENCES:
patent: 6114229 (2000-09-01), Hause et al.
patent: 6284634 (2001-09-01), Rha
patent: 6573583 (2003-06-01), Hokazono
Cho Jun-Kyu
Choi Si-Young
Kim Sung-Man
Ku Ja-Hum
Youn Sun-Pil
Cuneo Kamand
Harrison Monica D.
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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