Methods of fabricating integrated circuit field effect transisto

Details Methods of fabricating integrated circuit field effect transisto Methods of fabricating integrated circuit field effect transisto

1998-08-28

2000-09-12

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438199, 438229, 438230, 438231, 438183, 438301, 438305, H01L 21336, H01L 218234

Patent

active

061177156

ABSTRACT:
Multiple implants are performed in an integrated circuit substrate by implanting ions into a face thereof. Then, a gate insulating layer and a gate electrode are formed on the face of the integrated circuit substrate after performing the multiple implants in the integrated circuit substrate. Preferably, ions are not implanted into the integrated circuit substrate through the face after forming the gate insulating layer and the gate electrode on the face of the integrated circuit substrate. By preferably performing all implants prior to forming a gate insulating layer, the gate insulating layer is not degraded by implanting ions into the face of the integrated circuit substrate through the gate insulating layer.

REFERENCES:
patent: 5028556 (1991-07-01), Chang
patent: 5494851 (1996-02-01), Lee et al.
patent: 5950081 (1999-09-01), Chang
patent: 5981326 (1999-11-01), Wanlass
patent: 5994179 (1999-11-01), Masuoka

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