Methods of fabricating integrated circuit devices having...

Details Methods of fabricating integrated circuit devices having... Methods of fabricating integrated circuit devices having...

2005-12-13

2005-12-13

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S302000, C438S303000, C438S230000, C438S682000, C257S288000, C257S382000

Reexamination Certificate

active

06974752

ABSTRACT:
A gate having sidewalls is formed on an integrated circuit substrate. A barrier layer spacer is formed on the sidewalls of the gate. A portion of the barrier layer spacer protrudes from the sidewalls of the gate exposing a lower surface of the barrier layer spacer that faces the integrated circuit substrate. A silicide layer is formed on the portion of the barrier layer spacer protruding from the sidewalls of the gate. Related devices are also provided.

REFERENCES:
patent: 6693013 (2004-02-01), Bae et al.

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