Methods of fabricating flash memory devices with floating...

Details Methods of fabricating flash memory devices with floating... Methods of fabricating flash memory devices with floating...

2007-05-29

2007-05-29

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S284000, C438S285000, C438S694000, C438S696000, C257SE29129, C257SE21179, C257SE21687

Reexamination Certificate

active

11240234

ABSTRACT:
Methods of fabricating a floating gate of a flash memory cell are provided in which a first polysilicon layer is formed between first and second isolation layers. An upper region of the first polysilicon layer is then oxidized. The oxidized upper region of the first polysilicon layer is subsequently removed. A second polysilicon layer is formed on the first polysilicon layer. The second polysilicon layer and the first polysilicon layer are patterned to form the floating gate.

REFERENCES:
patent: 6448606 (2002-09-01), Yu et al.
patent: 6498064 (2002-12-01), Tseng
patent: 6620681 (2003-09-01), Kim et al.
patent: 7064064 (2006-06-01), Chen et al.
patent: 2005/0142765 (2005-06-01), Joo

Affiliated with

Also associated with

Rating

Methods of fabricating flash memory devices with floating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of fabricating flash memory devices with floating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of fabricating flash memory devices with floating... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3767251