Methods of fabricating flash memory devices and flash memory...

Details Methods of fabricating flash memory devices and flash memory... Methods of fabricating flash memory devices and flash memory...

2008-03-04

2008-03-04

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S316000

Reexamination Certificate

active

07338849

ABSTRACT:
Methods of fabricating a flash memory device and flash memory devices fabricated thereby are provided. One of the methods includes forming an isolation layer in a semiconductor substrate to define a plurality of parallel active regions in the semiconductor substrate. A plurality of first conductive layer patterns are formed on the active regions. The first conductive layer patterns are spaced apart from each other in a lengthwise direction of the active regions. An insulating layer is conformally formed on the semiconductor substrate and the first conductive layer patterns. A second conductive layer is formed on the insulating layer. The second conductive layer is patterned until the insulating layer is exposed to form a plurality of parallel second conductive layer patterns. The second conductive layer patterns cross the active regions and the isolation layer to overlap the first conductive layer patterns.

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Office Action corresponding to Korean Application No. 10-2004-0087518 dated Jan. 31, 2006.

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