Methods of fabricating an access transistor for an...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S197000, C438S257000, C438S259000

Reexamination Certificate

active

07858471

ABSTRACT:
Fabrication methods for gate transistors in integrated circuit devices enable the formation of recessed access device structures or FinFET structures having P-type workfunctions. The fabrication methods also provide for the formation of access transistor gates of an access device following formation of the periphery transistor gates. Access devices and systems including same are also disclosed.

REFERENCES:
patent: 5918123 (1999-06-01), Yang
patent: 6037194 (2000-03-01), Bronner et al.
patent: 6258667 (2001-07-01), Huang
patent: 6278164 (2001-08-01), Hieda et al.
patent: 6387717 (2002-05-01), Blalock et al.
patent: 6486023 (2002-11-01), Nagata
patent: 6713312 (2004-03-01), Blalock et al.
patent: 6717210 (2004-04-01), Takano et al.
patent: 6737323 (2004-05-01), Mo
patent: 7026218 (2006-04-01), Rotondaro et al.
patent: 7056781 (2006-06-01), Yoon et al.
patent: 7064066 (2006-06-01), Metz et al.
patent: 7091654 (2006-08-01), Blalock et al.
patent: 7183164 (2007-02-01), Haller
patent: 7199419 (2007-04-01), Haller
patent: 7223679 (2007-05-01), Murthy et al.
patent: 7285812 (2007-10-01), Tang et al.
patent: 7317231 (2008-01-01), Metz et al.
patent: 7323375 (2008-01-01), Yoon et al.
patent: 7329581 (2008-02-01), Kang et al.
patent: 7368344 (2008-05-01), Haller
patent: 7405449 (2008-07-01), Yagishita
patent: 7416943 (2008-08-01), Figura et al.
patent: 7425497 (2008-09-01), Chudzik et al.
patent: 7521322 (2009-04-01), Tang et al.
patent: 7557032 (2009-07-01), Nejad et al.
patent: 7626223 (2009-12-01), Haller
patent: 7687342 (2010-03-01), Haller et al.
patent: 7696567 (2010-04-01), Haller et al.
patent: 2008/0061346 (2008-03-01), Tang et al.
S. Wolf, 1986, Silicon Processing for the VLSI Era vol. 1—The Submicron MOSFET, pp. 302-307.
S. Wolf, 1986, Silicon Processing for the VLSI Era vol. 1—The Submicron MOSFET, pp. 384-389.

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