Methods of fabricating a semiconductor device

Details Methods of fabricating a semiconductor device Methods of fabricating a semiconductor device

2006-05-08

2009-06-02

Norton, Nadine (Department: 1792)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

C216S037000, C216S036000, C438S128000, C438S129000, C438S118000, C438S280000, C438S316000, C438S585000, C438S618000, C257S208000, C257S211000, C257S758000, C257S775000, C257S776000

Reexamination Certificate

active

07540970

ABSTRACT:
Methods of fabricating a semiconductor device are provided. Methods of forming a finer pattern of a semiconductor device using a buffer layer for retarding, or preventing, bridge formation between patterns in the formation of a finer pattern below resolution limits of a photolithography process by double patterning are also provided. A first hard mask layer and/or a second hard mask layer may be formed on a layer of a substrate to be etched. A first etch mask pattern of a first pitch may be formed on the second hard mask layer. After a buffer layer is formed on the overall surface of the substrate, a second etch mask pattern of a second pitch may be formed thereon in a region between the first etch mask pattern. The buffer layer may be anisotropically etched using the second etch mask pattern as an etch mask, forming a buffer layer pattern. The second hard mask layer may be anisotropically etched using the first etch mask pattern and/or the buffer layer pattern as etch masks, forming a second hard mask pattern. The first hard mask layer may be anisotropically etched using the second hard mask pattern as an etch mask, forming a first hard mask pattern. The etched layer may be anisotropically etched using the first hard mask pattern as an etch mask.

REFERENCES:
patent: 2005/0277276 (2005-12-01), Stephens et al.
patent: 11-329939 (1999-11-01), None
patent: 100223325 (1999-07-01), None
patent: 1020010004612 (2001-01-01), None

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