Methods of depositing films on semiconductor wafers using partia

Details Methods of depositing films on semiconductor wafers using partia Methods of depositing films on semiconductor wafers using partia

1997-03-27

1999-09-07

Booth, Richard

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438763, 438907, 438908, 427 99, H01L 2131

Patent

active

059501090

ABSTRACT:
Methods of depositing films on semiconductor wafers include the steps of loading a deposition apparatus with a first plurality of semiconductor wafers from a first run cassette and then depositing a first material such as undoped silica glass (USG) or borophosphosilicate glass (BSPG), for example, thereon. After a first film has been completely deposited on each of the loaded wafers, a first wafer in the first plurality is removed from the apparatus and another wafer from the first run cassette is loaded into the apparatus. A second film of the first material is then deposited on the remaining first plurality of wafers and the added wafer. Following this deposition step, a second wafer from the first plurality is removed from the apparatus and another wafer (e.g., seventh wafer) from the first run cassette is loaded into the apparatus. If this deposition apparatus has N dispersion heads, the above sequence of steps will be repeatedly performed at least until all the wafers from the first run cassette have been loaded and the Nth and higher wafers from the first run cassette have received a composite film deposited thereon which has the desired final thickness. However, after the last wafer from the last run cassette has been loaded, the first, second, . . . , and N-1 wafers from the first run cassette are reloaded back into the apparatus and additional deposition steps are performed so that additional intermediate films may be deposited on the reloaded wafer. Then, once the last wafer from the last run cassette has undergone a final deposition step in the apparatus, the deposition steps are terminated and the last wafer from the last run cassette and the first, second, . . . , and N-1 wafers from the first run cassette are unloaded from the apparatus.

REFERENCES:
patent: 5135608 (1992-08-01), Okutani
patent: 5217340 (1993-06-01), Harada et al.
patent: 5668056 (1997-09-01), Wu et al.
patent: 5683940 (1997-11-01), Yahiro
patent: 5747381 (1998-05-01), Wu et al.

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