Methods for reducing mask erosion during plasma etching

Details Methods for reducing mask erosion during plasma etching Methods for reducing mask erosion during plasma etching

1998-02-04

2000-07-25

Nuzzolillo, Maria

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 69, 156345, 156643, 156646, C23C 400

Patent

active

060933321

ABSTRACT:
A method for reducing erosion of a mask while etching a feature in a first layer underlying the mask is disclosed. The first layer is disposed on a substrate, with the substrate being positioned on a chuck within in a plasma processing chamber. The method includes flowing an etchant source gas into the plasma processing chamber and forming a plasma from the etchant source gas. The method further includes pulsing an RF power source at a predefined pulse frequency to provide pulsed RF power to the chuck. The pulsed RF power has a first frequency and alternates between a high power cycle and a low power cycle at the pulse frequency The pulse frequency is selected to be sufficiently low to cause polymer to be deposited on the mask during the low power cycle.

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Giffen, et al., "Silicon Dioxide Profile Control for Contacts and Vias", Solid State Technology (Apr., 1989) pp 55-57.

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